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APTGT225A170G
Phase leg Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1
VCES = 1700V IC = 225A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
OUT
Q2 G2
E2 0/VBUS
G1 E1
VBUS
0/VBUS
OUT
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Max ratings 1700 340 225 450 20 1250 450A @ 1600V
Unit V
July, 2006 1-5 APTGT225A170G - Rev 1
A V W
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT225A170G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 225A Tj = 125C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 500 2.4 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 225A R G = 3.3 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 225A R G = 3.3 VGE = 15V Tj = 125C VBus = 900V IC = 225A Tj = 125C R G = 3.3
Min
Typ 20 0.8 0.66 370 40 650 180 400 50 800 300 72
Max
Unit nF
ns
ns
mJ 70.5
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1700
Typ
Max 500 750
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1700V
IF = 225A
225 1.8 1.9 385 490 57 93 26 52
2.2
V ns
July, 2006 2-5 APTGT225A170G - Rev 1
IF = 225A VR = 900V
di/dt =2400A/s
C mJ
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APTGT225A170G
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.1 0.18 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3500 -40 -40 -40 3 2
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT225A170G - Rev 1
July, 2006
APTGT225A170G
Typical Performance Curve
Output Characteristics (VGE=15V) 450 400 350 IC (A) 300 IC (A) 250 200 150 100 50 0 0 1 2 V CE (V) 3 4
TJ=125C TJ=25C
Output Characteristics 450 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE (V) 4 5
VGE=9V VGE =13V VGE =15V TJ = 125C VGE=20V
Transfert Characteristics 450 400 350 300 IC (A) 250 200 150 100 50 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 180 150 120 E (mJ) 90 60 30 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 20
VCE = 900V VGE =15V IC = 225A T J = 125C Eon T J=125C T J=125C TJ=25C
180 150 120 E (mJ) 90 60 30 0
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 3.3 TJ = 125C Eon Eoff Er
10
11
12
13
0
100
200 IC (A)
300
400
500
Reverse Bias Safe Operating Area 500 400 IC (A) 300 200 100 0 0 400 800 1200 1600 2000 V CE (V)
V GE=15V T J=125C RG=3.3
Eoff Er
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
IGBT
0.1 0.05 0 0.00001
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4-5
APTGT225A170G - Rev 1
July, 2006
APTGT225A170G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20
ZCS ZVS VCE =900V D=50% RG=3.3 T J=125C T C=75C
Forward Characteristic of diode 450 400 350 300 IC (A) 250 200 150 100 50 0
TJ =125C T J=125C TJ =25C
15
10
5
hard switching
0 0 60 120 180 IC (A) 240 300 360
0
0.5
1
1.5 VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.2 Thermal Impedance (C/W) 0.16 0.12 0.5 0.08 0.04 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT225A170G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2006

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